| No. | 公報番号 | 出願日 | 出願人 | 発明の名称 | A分類 | 分類 | 発明相応図 | 和文コメント | Abstract |
| 1 | WO200480886 | 2004/9/23 | BTG INTERNATIONAL LIMITED [GB/ GB] 10 Fleet Place Limeburner Lane London EC4M 7SB (GB) | MEMS DEVICES ON A NANOMETER SCALE | A1 | DB01 DBX DF02 | FP | ふたつ以上の長手方向に伸びたナノスケールのアームが相対するよう配置され、静電気的に稼動するように構成された素子。ナノインプリント法やCMOS配線プロセスで形成する。 | An array of nanometric dimensions consisting of two or more arms positioned side by side wherein the arms are of such nanometric dimensions that the beams can be moved or deformed towards or away from one another by means of a low voltage applied between the beams whereby to produce a desired optical electronic or mechanical effect. At nanometer scale dimensions structures previously treated as rigid become flexible and this flexibility can be engineered since it is a direct consequence of material and dimensions. Since the electrostatic force between the two arms is inversely proportional to the square of the distance a very considerable force will be developed with a low voltage of the order of 1-5 volts which is sufficient to deflect the elements towards or away from one another. As preferred the bulk of the element may be comprises an insulating material and an upper conductive layer is applied on the upper surface where the element is formed by a nanolithography method such as nanoimprint lithography (NIL). Alternatively the elements may be formed completely of conductive material where the elements are formed by a CMOS metalization process. |
| 2 | WO200331991 | 2003/4/17 | ORLOV Oleg Alekseewich [RU/ US] Horsman Way Street 3512 Davidsonville MD 21035 (US) (except US) ALEXENKO Andrey Gennadievich [RU/ RU] ul. Serafimovicha 2-212 Moscow 109072 (RU) ANANYAN Mikhail Arsenovich [RU/ RU] Leninsky prospekt 52-430 Moscow 117333 (RU) DSHKHUNYAN Valery Leonidovich [RU/ RU] pl. Junosti 2-19 Zelenograd 103460 (RU) KOLOMEITZEV Vyacheslav Fedorovich [RU/ RU] Sirenevy bulvar 3-5-60 Moscow 105122 (RU) LUSKINOVICH Petr Nikolaevich [RU/ RU] Altufievskoe shosse 40-357 Moscow 127577 (RU) NEVSKY Alexandr Borisovich [RU/ RU] Zelenograd 450-33 Moscow 103498 (RU) | TUNNEL MECHANICAL VIBRATION NANOTRANSDUCER AND METHOD FOR PRODUCING SAID NANOTRANSDUCER | A1 A2 | DDX MA01 MA02 MD04 MD07 | 1 | メカニカル振動ナノトランデューサーであって検査装置などに好適に用いることができる。該トランデューサーのセンサー素子は単結晶シリコンで形成され、好適な金属で被覆されている。 | The inventive tunnel mechanical vibration nanotransducer relates to microsystems used for inspection technology. Said nanotransducer comprises a sensing element in the form of a monocrystalline silicon probe coated with a layer of precious metal. A polycrystalline silicon membrane provided with corrugations on the sides thereof and coated with a layer of precious metal on the side of the probe is arranged thereunder with a gap ranging from nanometric fractions to micronic fractions. Said probe is connected to an input voltage source. The nanotransducer also comprises a gap control unit a deflecting electrode disposed around the probe and made of a precious metal an input voltage amplifier an analog-to-digital converter a unit for measuring electrical capacity and a unit for limiting a tunnel current. The inventive method for producing the tunnel nanotransducer is based on a semiconductor planar technology. |
| 1 | WO200075762 | 2000/12/14 | ASTRAZENECA AB [SE / SE] S-151 85 Södertälje (SE) (except US) MARNFELDT Göran [SE / SE] AstraZeneca R & D Lund S-221 87 Lund (SE) (only US) | ELECTRICAL DEVICE | A2 | DB03 MA02 | 2 | 集積回路のクロック信号発生器とその発生法に関するもので、シリコン基板と振動システムからなり、前記振動システムは表面マイクロマシーニング技術で作製された電気的に駆動するＭＥＭＳである。 | A clock signal generator in an integrated circuit semiconductor device and a method of generating a clock signal the clock signal generator comprising: a semiconductor substrate (2); an oscillator unit (4) which comprises at least one support member (10 12) which is fixed relative to the substrate (2) an oscillator arm (6) which is oscillatably disposed to the at least one support member (10 12) with regard a reference position which oscillator arm (6) includes first and second conductive sections (6a 6b) at positions extended from the at least one support member (10 12) and at least one biasing element (14 16) for biasing the oscillator arm (6) towards the reference position; a driver (18) which is disposed at the substrate (2) in spaced relation adjacent one of the conductive sections (6a) of the oscillator arm (6) which driver (18) is configured in use to drive the one of the conductive sections (6a) of the oscillator arm (6) towards or away therefrom when an electrical signal is applied thereto; a sensor (20) which is disposed at the substrate (2) in spaced relation adjacent the other of the conductive sections (6b) of the oscillator arm (6) which sensor (20) is configured in use to generate an electrical signal dependent upon the spacing of the other of the conductive sections (6b) of the oscillator arm (6) therefrom; loop circuitry (28) which in use receives the variable electrical signal generated by the sensor (20) and in response thereto applies an electrical signal to the driver (18) so as to cause oscillation of the oscillator arm (6) at the natural oscillating frequency of the oscillator arm (6); and a clock signal output (36) which is responsive to the variation in the variable electrical signal generated by the sensor (20) so as to provide a clock signal. |
| 2 | WO200075999 | 2000/12/14 | TELEFONAKTIEBOLAGET LM ERICSSON [SE / SE] S-126 25 Stockholm (SE) | VARIABLE CAPACITANCE LOW PASS FILTER AND MICRO-ELECTROMECHANICAL SWITCHING ARRANGEMENT | A2 | DB01 DB04 DB05 MA01 | 2 | 可変型キャパシターで第一、第二の導電層、並びに半導体層からなり、前記第一、第二の導電層は静電気的に発生する力に対し、お互いに影響を受けるように配置してなる。ローパス・フィルターやＭＥＭＳに用いることができる。 | The present invention refers to a variable capacitance (10 10a 10b 10'a 10'b) comprising a first conductive layer (11 11') a second conductive layer (12 12') and a semiconductor layer (14 14') said first and second layers (11 11' 12 12') being arranged to be displaced relative each other under influence of an electrostatically generated force.The semiconductor layer (14 14') constitutes a voltage generator which when exposed to a radiation produces a voltage for charging said first and second conductive layers (11 11' 12 12') and induces said electrostatically generated force.The present invention also refers to a low pass filter and a micro-electromechanical switching arrangement using the variable capacitance. |
| 3 | WO200126136 | 2001/4/12 | DELTA DANISH ELECTRONICS LIGHT & ACOUSTICS [DK / DK] Venlighedsvej 4 DK-2970 Hrsholm (DK) (except US) JANTING Jacob [DK / DK] Slangerupgade 27 B 1. tv. DK-3400 Hillerød (DK) (only US) BRANEBJERG Jens Anders [DK / DK] Stumpedyssevej 9 DK-2970 Hørsholm (DK) (only US) ROMBACH Pirmin [DE / DK] Christian X's Allé 92 DK-2800 Lyngby (DK) (only US) | ENCAPSULATION FOR A THREE-DIMENSIONAL MICROSYSTEM | A2 | DC03 PA11 MA01 MD03 ME10 | 4 | センサー、トランデューサー、アクチュエーター、MEMSなどの３次マイクロシステム化に関するもので、外部の環境の影響を少なくするために、マイクロシステムの少なくとも外面に形成された第一の材料の上に第二の材料をコートする。 | The present invention relates to an encapsulation for a microsystem.The microsystems may comprise a sensor transducer actuator MEMS or other three-dimensional microsystems.The encapsulation may serve as a protection against environments such as chemical attack physical attack fluid penetration and Electro Magnetic Interference.The choice of materials of the encapsulation depends on the object of encapsulation.The actual encapsulation may be applied by providing a first layer of a first material onto at least part of an outer surface of the microsystem providing a second layer of a second material onto the first layer. |
| 4 | WO200177008 | 2001/10/18 | ROBERT BOSCH GMBH [DE/ DE] Postfach 30 02 20 70442 Stuttgart (DE) (except US) OFFENBERG Michael [DE/ DE] Braikestrasse 13 72138 Kirchentellinsfurt (DE) (only US) LUTZ Markus [DE/ DE] Mahagony Lane 762 Sunnyvale CA 94086 (US) (only US) | MICROMECHANICAL COMPONENT AND CORRESPONDING PRODUCTION METHOD | A2 | DD01 PA01 PH04 MA01 MA02 | 3 | 基板に形成されたＭＥＭＳであって、MEMS機能部とその上に形成されたカバー部、さらにその上に敷設された配線部とからなり、前記カバー部は単結晶、または多結晶であることを特徴とする。 | The invention relates to a micromechanical component with a substrate (1) a micromechanical functional plane surface (100) provided on the substrate a covering plane surface (200) provided on the micromechanical plane surface (100) and a conductor path plane surface (300) provided on the cover plane surface (200). The cover plane surface (200) comprises a monocrystalline region (14) grown epitactically on an underlying monocrystalline region (7 24) and the cover plane surface (200) comprises a polycrystalline region (15) grown epitactically and simultaneously on an underlying polycrystalline seed layer (13). |
| 5 | WO200241622 | 2002/5/23 | TECHNION RESEARCH & DEVELOPMENT FOUNDATION LTD. [IL/ IL] Technion City 32000 Haifa (IL) (except US) RAFAEL - ARMAMENT DEVELOPMENT AUTHORITY LTD. [IL/ IL] P.O. Box 2250 31021 Haifa (IL) NEMIROVSKY Yael [IL/ IL] Rehov Golda Meir 7 34982 Haifa (IL) (only US) DEGANI Ofir [IL/ IL] Rehov Eli Cohen 37/16 78306 Ashkelon (IL) (only US) SETER Dan [IL/ IL] Rehov Tchernichovsky 51/4 35704 Haifa (IL) (only US) SOCHER Eran [IL/ IL] Rehov Burla 42 69364 Tel-Aviv (IL) (only US) | METHOD AND APPARATUS FOR MICRO-MACHINED SENSORS USING ENHANCED MODULATED INTEGRATIVE DIFFERENTIAL OPTICAL SENSING | A2 | DD01 MA01 | 3a | MEMS部とセンサー部の距離を検知するためのデバイス及び方法に関するもので、検知は光学的に行い、MEMSはフォトダイオードアレイと読取り回路からなるCMOSチップにMEMSのグリッドを前記フォトダイオードが位置合せされてボンディングされている。 | Method and apparatus for sensing the displacements of micromachined devices and sensors. The method is referred to as the enhanced modulated integrative differential optical sensing (EMIDOS). The target micromachined proof-mass for which displacements are measured includes a grid of slits. The micromachined device is bonded to a CMOS chip containing a matching photodiodes array and their readout electronics. The grid is aligned with the photodiodes. An illumination source such as an LED is then mounted above the micromachiend device. A model for the noise equivalent displacement (NED) |
| 6 | WO200250528 | 2002/6/27 | EIDGENÖSSISCHE TECHNISCHE HOCHSCHULE ZÜRICH [CH/ CH] Physical Electronics Laboratory ETH Hönggerberg HPT-H6 CH-8093 Zürich (CH) (except US) BALTES Henry [CH/ CA] Hauswiesenstrasse 1 CH-8049 Zürich (CH) (only US) BARRETTINO Diego [CH/ IT] Axenstrasse 4 CH-6454 Flüelen (CH) (only US) GRAF Markus [CH/ DE] Am Börtli 17 CH-8049 Zürich (CH) (only US) HAGLEITNER Christoph [CH/ AT] Reservoirstrasse 4 CH-8304 Wallisellen (CH) (only US) HIERLEMANN Andreas [CH/ DE] Im Wingert 5 CH-8049 Zürich (CH) (only US) | MICROSENSOR AND SINGLE CHIP INTEGRATED MICROSENSOR SYSTEM | A2 | DD09 | 2 | ガスセンサーに関するもので、センサー、とりわけ、抵抗膜センサーが楕円状か多角形状のマイクロヒーターが付属しており、それらがワンチップに集積されている。マイクロセンサーは熱的に絶縁された半導体構造の上に形成されている。 | A microsensor system in particular gas sensor system is integrated on a single chip and includes a microsensor preferably a resistive-film-sensor configuration with a microheater the latter preferably of essentially round elliptic or polygonal structure. The microsensor is located on a thermally insulated semiconductor structure e.g. a thin membrane. Further included or integrated on the chip may be one or more first circuits for controlling the microheater and/or second circuits for evaluating or processing the measured values obtained from the microsensor. The first circuits may include power and/or temperature controller for the microheater. The second circuits may include an A/D converter a digital signal processor a digital output interface for processing sensor signals and transferring them to external devices and/or potentiostats to regulate the electrode potential applied to the gas-sensitive layer. Also provided on a single chip may be a plurality of microsensors and micro-heaters with associated integrated circuits. The latter may then include multiplexing circuits for the sensor and the heater signals. |
| 7 | WO200256031 | 2002/7/18 | SILVERBROOK RESEARCH PTY. LTD. [AU/ AU] 393 Darling Street Balmain New South Wales 2041 (AU) (except US) SILVERBROOK KIA [AU/ AU] Silverbrook Research Pty Ltd 393 Darling Street Balmain New South Wales 2041 (AU) (only US) | ACCELEROMETER PROTECTED BY CAPS APPLIED AT THE WAFER SCALE | A2 | DD01 PH05 | 23 | 加速度センサーであって、プラスチックモールドでキャップされている構造を有し、その中ではカンチレバーが稼動可能な空間を有している。これらのキャップはウエハ上の加速度センサーに一括で形成され、あとで各チップに分離される。 | An accelerometer chip (202) has a molded thermoplastic cap (210) applied on one surface to provide a cavity into which the cantilevered mass (204) of the accelerometer may move. An array of caps is applied to a wafer of accelerometer chips (202) before singulation of the wafer. |
| 8 | WO200293122 | 2002/11/21 | ROBERT BOSCH GMBH [DE/ DE] Postfach 30 02 20 70442 Stuttgart (DE) (except US) RUDHARD Joachim [DE/ DE] Langwiesenstr. 3 70771 Leinfelden-Echterdingen (DE) (only US) HEYERS Klaus [DE/ DE] Robert-Koch-Strasse 37 72766 Reutlingen (DE) (only US) | SENSOR ARRANGEMENT IN PARTICULAR MICRO-MECHANICAL SENSOR ARRANGEMENT | A2 | DD01 PH03 | 2 | MEMSセンサーの配列方法とその製造技術に関するものであり、センサー部、前記センサー部をハーメチックシールドするカバー部からなる。カバー部には電子回路が集積され、センサーと電気的に接続され、センサーの信号を解析する。 | The invention relates to a sensor arrangement (1) in particular a micro-mechanical sensor arrangement (1) and method for production thereof comprising a sensor section (2) for delivering determined sensor signals and a cover section (3) arranged on the sensor section (2) to form a hermetically sealed inner sensor chamber (4). An analytical electronic device (30) may be integrated at least partly in the cover section (3) for an analysis of the sensor signals and may be connected electrically to a corresponding circuit device (20) in the sensor section (2). |
| 9 | WO200338449 | 2003/5/8 | AUSTRIAMICROSYSTEMS AG [AT/ AT] Schloss Premst?tten A-8141 Unterpremst?tten (AT) (except US) BRANDL Manfred [AT/ AT] Flurgasse 5 A-8112 Gratwein (AT) (only US) CSERNICSKA Robert [AT/ AT] Wiesenstr. 3 A-8510 Stainz (AT) (only US) | MICRO-SENSOR | A2 | DD01 PGX | 1 | センサー素子と半導体集積回路との集積したマイクロセンサーに関するもので、センサー素子は半導体回路の主表面にマウントされ、半導体基板と低温で結合させるものである。 | The invention relates to a micro-sensor with a sensor element (2) and an integrated circuit (1) comprising a semiconductor body (11) with an integrated circuit (4) whereby the sensor element (2) is arranged on a main surface (12) of the semiconductor body (11) and a eutectic connection (3) is formed between the semiconductor body (11) and the sensor element (2). |
| 10 | WO200378301 | 2003/9/25 | QINETIQ LIMITED [GB/ GB] 85 Buckingham Gate London SW1E 6PD (GB) (except US) BRUNSON Kevin Michael [GB/ GB] c/o QINETIQ Malvern Technology Centre St Andrews Road Malvern Warwickshire WR14 3PS (GB) (only US) BUNYAN Robert John Tremayne [GB/ GB] c/o QINETIQ Malvern Technology Centre St Andrews Road Malvern Warwickshire WR14 3PS (GB) (only US) HAMILTON David James [GB/ GB] c/o QINETIQ Malvern Technology Centre St Andrews Road Malvern Warwickshire WR14 3PS (GB) (only US) McNIE Mark Edward [GB/ GB] c/o QINETIQ Malvern Technology Centre St Andrews Road Malvern Warwickshire WR14 3PS (GB) (only US) | MICRO-ELECTROMECHANICAL SYSTEMS | A2 | DD01 PB02 MA01 MAX | 8 | センサー素子が集積されたＭＥＭＳ、およびセンサーとJFETが電気的に導通した前記MEMSの製法に関するもので、JFETはＭＥＭＳとモノリシックに基板に形成され、センサー素子とワイヤボンドで電気的な接続を得ることが可能である。 | A MEMS incorporating a sensing element and a JFET electrically connected to the sensing element is fabricated by the steps of: forming a first layer of electrically insulating barrier material on a surface of a substrate; patterning the first layer so as to expose a first region of the substrate doping by ion implantation the first region of the substrate to form a well region of the JFET; forming a second layer of barrier material on the surface of both the first layer and the first region of the substrate; patterning the barrier material so as to expose a part of the first region of the substrate; doping by ion implantation the exposed part of the first region of the substrate to form source and drain contact areas of the JFET; patterning the barrier material so as to expose a second region of the substrate; and doping by ion implantation the second region of the substrate to form gate and substrate contact areas of the JFET in a single implantation step. The monolithic integration of the JFET with the MEMS enables the bond wires for interconnecting the sensing element and the associated sensing electronic circuitry to be provided only after the buffering stage of such circuitry. This means that the bond wires interconnecting the buffering stage and the remainder of the circuitry are connected to a low impedance node which is less sensitive to noise and parasitic capacitive loading. Thus greater detection accuracy can be achieved by virtue of the fact that the parasitic capacitances are reduced to a minimum. |
| 11 | WO200459652 | 2004/7/15 | INTERNATIONAL BUSINESS MACHINES CORPORATION [US/ US] T.J. Watson Research Center P.O. Box 218 Yorktown Heights NY 10598 (US) (except US) HSU Louis L. [US/ US] 7 Crosby Court Fishkill NY 12524 (US) (only US) WANG Li-Kong [US/ US] 2 Morgan Court Montvale NJ 07645 (US) (only US) | MICROMACHINED ELECTROCHEMICAL (MEM) RANDOM ACCESS MEMORY ARRAY AND METHOD OF MAKING SAME | A2 | DB01 DB05 DB06 DBX PB01 MAX MB03 MG01 | 3 | MEMSを用いたRAM(ランダムアクセスメモリ）とその製法に関するもので、MEMSスイッチと容量素子のアレイが集積されたものである。MEMSスイッチは記憶情報を読み込むために第一の部位から第二の部位に移動する機能を有する。 | A micromachined electromechanical random access memory (MEMRAM) array is disclosed which includes a plurality of MEM memory cells where each MEM memory cell has an MEM switch and a capacitor. The MEM switch includes a contact portion configured for moving from a first position to a second position for reading out a charge stored within the capacitor or for writing the charge to the capacitor. A method is also disclosed for fabricating each MEM memory cell of the MEMRAM array. |
| 12 | WO2004109163 | 2004/12/16 | WIJNGAART Wouter van der [BE/ SE] Surbrunnsgatan 2 S-114 21 Stockholm (SE) STEMME G?ran [SE/ SE] Ruddammsv?gen 31 B S-114 21 Stockholm (SE) RIDGEWAY Anthony S. [US/ US] 12481 160th Street What Cheer IA 50268 (US) | A MICROMACHINED KNIFE GATE VALVE FOR HIGH-FLOW PRESSURE REGULATION APPLICATIONS | A2 | DC02 PB02 PI03 MG01 | 6a | 高流速の圧力計に用いられるマイクロバルブに関するもので、第一の基板とその上に設けられた第二の基板からなり、その間がチャンネルとなる。バイモルフのアクチュエーターで駆動するナイフ状のゲートで流速を制御する。 | The present invention discloses a microvalve for providing pneumatic -flow regulation suitable for use in microsystem applications that are operable using highly efficient actuation means for flow obstruction while being space efficient in design in a manner that is suitable for cost effective bullsk microfabrication. In an embodiment of the invention the microvalve comprises a first substrate layer a second layer disposed over the first substrate layer cooperating with the first substrate layer to form a channel through which the flow traverses and defines a direction of the flow. An obstruction element or knife gate is micromachined into the second layer such that it is pivotably attached and actuated with a bimorph actuator to displace the gate along a plane that is substantially perpendicular to the direction of the flow in order to controllably regulate the flow. In a further embodiment a microsystem comprising the microvalve concept of the invention is microfabricated into an IP-converter for pneumatic high flow pressure control applications. |
| 13 | WO200500733 | 2005/1/6 | COMMISSARIAT A L'ENERGIE ATOMIQUE [FR/ FR] 31/33 rue de la F?d?ration F-75752 Paris Cedex 15 (FR) (except US) JOLY Jean-Pierre [FR/ FR] 22 place Salvadore Allende F-38120 Saint-Egr?ve (FR) (only US) ULMER Laurent [FR/ FR] 55bis rue de Stalingrad F-38100 Grenoble (FR) (only US) PARAT Guy [FR/ FR] 26 rue du Drac F-38640 Claix (FR) (only US) | INTEGRATED CIRCUIT ON HIGH PERFORMANCE CHIP | A2 | PB02、PHX | FP | 能動素子、受動素子を搭載した集積回路の製法に関するもので、能動素子（例えば、トランジスタ）が形成された第一の基板と受動素子（例えば、MEMS)が形成された第二の基板を向かい合わせて、結合させることを特徴とするものである。 | The invention relates to a production method for a chip comprising an integrated circuit with active components and passive components. Said method comprises the following steps: the production of a first substrate (1) containing at least one active component (3) of said active components and a second substrate (2) containing the critical components (7 8) of said passive components (in other words the passive components whose embodiment directly on the substrate containing the active circuits and the metallic interconnections would cause problems) subsequently the two substrates (1) and (2) are joined by layer transfer. The active components (3) can be for example transistors. The critical passive components can for example be MEMS (8) and/or capacitors (7) particularly capacitors the dielectric material of which is a perovskite. The invention further relates to a chip (100) produced by the above method. |
| 1 | WO2005106478 | 2005/11/10 | INFINEON TECHNOLOGIES AG [DE/ DE] St.-Martin-Str. 53 81669 M?nchen (DE) (except US) FREY Alexander [DE/ DE] Eichenstr. 1 82024 Taufkirchen (DE) (only US) HOFMANN Franz [DE/ DE] Herbergstrasse 25B 80995 M?nchen (DE) (only US) SCHINDLER-BAUER Petra [DE/ DE] Zugspitzstr. 23 85591 M?nchen (DE) (only US) | METHOD FOR FUNCTIONALIZING BIOSENSOR CHIPS | A3 | DC01 DC03、DE01 | FP | プロセスが完了したウエハ上の半導体チップに形成されたバイオセンサーの機能化の方法に関するものであり、センサーはアレイ化され、DNA RNAなどの有機分子の機能化がしやすいように形成されている。 | The invention relates to a method for functionalizing biosensors particularly those based on semiconductor chips mounted on a finished processed wafer provided with sensor fields placed thereupon which are usually arranged in an array and to be precise for carrying out a functionalization for example with organic molecules such as nucleic acids like DNA RNA and PNA or with their derivatives proteins sugar molecules or antibodies. |
| 2 | WO2006120221 | 2006/11/16 | STMicroelectronics S.r.l. [IT/ IT] / Via C. Olivetti 2 I-20041 Agrate Brianza (IT) (except US) SCURATI Mario Giovanni [IT/ IT] / Via degli Anemoni 21 I-20147 Milano (IT) (only US) | MICROFLUIDIC DEVICE WITH INTEGRATED MICROPUMP IN PARTICULAR BIOCHEMICAL MICROREACTOR AND MANUFACTURING METHOD THEREOF | A3 | DC01 DC02 DC03 DE01 | FP | 核酸分子を分析するマイクロ流体デバイスであって、モノリシックに形成されたマイクロ流体デバイス、半導体、マイクロポンプが集積されている。マイクロ流体回路はモノリシックな半導体内に試料調整チャンネルを含み、、少なくともひとつのマイクロ流体チャンネルを半導体内に有している。 | A microfluidic device for nucleic acid analysis includes a monolithic semiconductor body (13) a microfluidic circuit (10) at least partially accommodated in the monolithic semiconductor body (13) and a micropump (11). The microfluidic circuit (10) includes a sample preparation channel (18) formed on the monolithic semiconductor body (13) and at least one microfluidic channel (20 22) buried in the monolithic semiconductor body (13). The micropump (11) includes a plurality of sealed chambers (40) provided with respective openable sealing elements (41) and having a first pressure therein that is different from a second pressure in the microfluidic circuit (10). In addition the micropump (11) and the microfluidic circuit (10) are configured so that opening the openable sealing elements (41) provides fluidic coupling between the respective chambers (40) and the microfluidic circuit (10). The openable sealing elements (41) are integrated in the monolithic semiconductor body (13). |